Global Free Energy Blog

Continued from Green LED array measurements p3

At 2:52 pm PT, the green LED array, radio shack part number 276-009, was producing 695 mV DC, and climbing. The electrometer was turned off after the measurement because I had the dreadful thought of having to replace the batteries for the electrometer. The new updated electrometer has metal foil wrapped all around the batteries. It would take an act of congress to replace such batteries.

Between ~ 2:42 pm and ~ 2:52 pm the green array charged the 0.01 uF capacitor from 588 mV to 695 mV DC, which comes to ~ 1.8 pA. The resistance cannot be calculated since we do not know how much DC voltage the array was producing at that very moment. The the early time frame, 2:25 pm to 2:42 pm the array was produced ~ 1.1 pA. So the green array DC current is continuing to climb as it becomes less disturbed. It is expected to reach ~ 10 pA DC. The array is quickly recovery as it produces more DC current and voltage. According to experimental data, an undisturbed diode produces ~ 10 pA DC.

This green array would produce at least 1.10 V * 10 pA = 11 fW. IMO this array will produce far more than 1.1 volts when completely undisturbed. My best guesstimate is 0.5V * 6 = 3 volts, which comes to 30 fW.

Continued from Green LED array measurements p2

At 2:42 pm PT, 78 F, the green LED array, radio shack part number 276-009, was producing 588 mV DC, and climbing. It is noted that the LED array DC voltage will begin to slowly decrease when the electrometer is connected to it, which is nothing unexpected, for technical reasons that are beyond this blog post. In one sentence, the electrometer input bias current has higher precedence than the LED array, which causes a very slow disturbance to the diodes. I have left the electrometer on for the past several hours, and merely tilt it to take a measurement.

Between ~ 2:42 pm and ~ 2:25 pm the green array charged the 0.01 uF capacitor from 480 mV to 588 mV DC, which comes to ~ 1.1 pA. The resistance cannot be calculated since we do not know how much DC voltage the array was producing at that very moment.

Continued at Green LED array measurements p4

Continued from Green LED array measurements

At 1:10 pm PT the green LED array, radio shack part number 276-009, was producing 393 mV DC.

At about ~ 2:20 pm PT I decided to deliberately shine light on the array, not a terrible amount, but enough to easily see it. The DC voltage flipped, as expected. The DC voltage produced by light (photoelectric effect) from the LEDs and diodes with transparent cases (e.g., radio shack 1N914) has always been in the opposite voltage polarity as the DC voltage produced by the diode itself. The DC voltage was -240 mV, due to the photoelectric effect. After the light shined on the LED was removed, the DC voltage began to slowly reverse as the diodes reversed the charge on the low leakage 0.01 uF capacitor.

At about ~ 2:25 pm it’s 480 mV DC. It appears the LED array likes the new tilt switches that have ultra high resistance in the off position. Another option is that the LED array is so disturbed that it is oscillating as it dampens down. This has been an observed effect in highly disturbed diodes.

Continued at Green LED array measurements p3

On July 29th, 2009, a theory flashed into my mind. Moments later after analyzing the theory, it felt like a lightning bolt struck me, literally! My entire body was tingling with excitement unlike I’ve never experienced before. IMO, this theory is on the correct path, further details to come, but here’s the outline –>

The eventual goal is to compete the mathematics to prove the theory, which I am working on, but a few areas such as diodes in-parallel is posing some difficulties, mathematically speaking. Diodes in-parallel has always been my nightmare.

Experimental data is showing that electrical resistance of materials, probably all materials, varies to some degree depending on current and settling time. At extremely low current levels, the resistance of insulators can take weeks to appreciably settling down, that is, reach equilibrium. Lets say the diode was reset, IOW disturbed, and the resistance is 10 Gohm, then 1 pA of DC current is forced through the diode. Over time the diodes resistance will slowly increase after being reset. In this example lets say that in 10 hours it eventually settles at 100 Gohm. Now lets decrease the DC current to 10 fA, in which case it settles at 10 Tohm in 5 days.

Resetting the diode is achieved with sufficient energy. For example, 1 uA for 10 seconds might be sufficient to reset one particular diode, or rapidly heating the diode from 70 F to 120 F. When the diode is reset, it is at its minimum zero bias resistance. Once the diode is left unconnected and undisturbed, the resistance begins to slowly increase. It is ambient thermal energy that performs this task. As this slow process occurs, charged carriers become trapped over time jumping from the conduction band to the valence band as the charges drift across the junction.

The moment a load is placed across the LED, the diode is placed out of balance due to noise *current*, and ambient thermal energy causes the resistance to change, which releases charged carriers. While the load stays on the diode, the stored energy from trapped carriers slowly releases, which shrinks the depletion width. As the diodes stored energy depletes, the DC voltage and current will decrease, and will continue to decrease over time. An overly simplified equation would appear as E = I^2 * dR * t, where E is energy, t is time, I is effective noise current, and dR is the change in resistance, as it is the change in resistance that releases the energy stored in the diode.

In order to continually draw energy, on average of course, the load must switch back and forth between normal resistance and insulator. Lets use an example where the switching rate is 10 Hz. For a diode array chip, the load could be 100 ohms for 0.1 seconds, then the next 0.1 seconds it would 10 Tohm, and the next 0.1 seconds it would 100 ohms, etc.

What this means is that expensive THz diodes are not required. Even a cheap low bandwidth amorphous diode would do the job. At such low current levels, the diode reacts at an incredibly slow rate, which of course would rectify Johnson noise, but the DC voltages would be so low that it’s useless here. According to the theory, ambient thermal energy is striving for equilibrium by adapting to the diodes resistance, which varies according to diode load. So if there’s no load connected to the diode, then ambient thermal energy slowly increases diode resistance to maximum. When a load is placed on the diode, more noise current flows through the diode, and it is ambient thermal energy that seeks a new equilibrium state, which releases charged carriers resulting in less resistance.

If the theory is true, it appears that the TED effect is after all a helpful effect, as it’s responsible for the release of charged carriers. To be clear, this theory states that the main DC voltage is not due to the rectification of Johnson noise, but due to ambient thermal energy slowly trapping charged carriers, and then Johnson noise energy releasing such trapped carriers. So it’s not a rectification process per say. This is good news in that leading edge THz diodes are not required to produce a diode array chip that produces usable amounts of power. In fact, inexpensive *amorphous* Silicon diodes would do the job. The chip would consist of at least 10 in-series diodes, and then paralleling such *groups* to obtain sufficient DC current. No two diodes are connected in parallel.

A few minutes ago at 12:25 pm PT the 6 in-series green LED array, radio shack part number 276-009, was measured at producing 0.101 volts. This is a good sign, as it appears the diodes are recovering at a relatively fast rate, *or* the diode array was not as disturbed as initially thought. Again, the array was producing 1.10 volt until the flashlight was shined near the array, which caused the DC voltage to drop far below 100 mV.

Continued at Green LED array measurements p2

Today the 6 in-series green LED array, Radio Shack part number 276-009, shattered the record for maximum recorded DC voltage at producing 1.10 volts DC!

Here’s the details from past two days of measurements –>

Yesterday 2009/7/30, 5 pm PT, 78 F, 232 mV. This measurement was taken shortly after placing the green LED array inside the Hammond shield connected to the electrometer input. LED’s were inside dark room.

Today, 17 hours later as the LED array sat undisturbed inside a thick Hammond metal shield while connected to a low leakage capacitor, 2009/7/31, 10 am PT, 76 F, 1.10 volts

After seeing the 1.10 volts I stared at it in utter amazement for perhaps 10 seconds, but it seemed as eternity. The 1.10 volts was stable. After staring at it, I immediately opened the shield lids, grabbed a flashlight, turned it on, and shined it on the new tilt switches to verify they were making contact. Indeed, they were making contact, and the DC voltage was legit. I knew the flashlight would highly disturb the LEDs even though the light was not directed at the LEDs. Within ~ 5 to 10 seconds later I looked at the voltage meter, which showed the DC voltage dropping at a fast rate as the LEDs became disturbed, as expected.

The diode research is getting exciting! Yesterday, I made some mechanical tilt switches to replace the Mercury tilt switches because even the slightest disturbance decreases the Mercury switch off resistance far to low for such voltage measurements. The new tilt switches are made to have ultra high off resistance. Here’s how they were made. An ultra high resistance insulated metal wire, about 1″ long, arced 90 degrees, where one end had a small loop that had a short insulated wire dangling from the loop. The other end was soldered to an INA116PA electrometer input pin. The same was done to the other INA116PA input pin. The dangling wires would rotate as the entire setup was rotated. On the other side, separated ~ 1 cm, are two short insulated wires where the wire ends are split to form a V-shape. When the set up is rotated, the dangling wires make contact to the V-shape wires, which is connected to the LED array & low leakage capacitor. Her’s a quick drawing of the new tilt switches –>

[edit: I no longer recommend this exact type of homemade tilt switch unless you place an appreciable amount of weight on the hanging wire. After ~ a day a micro layer of oxide forms on the copper, which makes a poor contact. The weight of the short swinging wire is insufficient to make good metal-metal contact. This switch would work if weight was added to the swinging wire. When time permits I'll make a much improved tilt switch. For now, I'm using a *ball* tilt switch that was purchased last year-- part number is unavailable.]

The green and blue parts are electrically insulated metal wires. The black lines show the metal. The red arrows show the direction which the short green wire rotates when the setup is tilted. This allows for great separation distances, which equates to ultra high resistance.

Great care was taken to be certain that when the setup was flat (off) that the LED array was connected to exceptionally high resistance, probably well above 10 Tohm. There was no glue, no tape, or any such material between the LED array output pins. The LED array sits on a thick clean plastic plate. This allows the LED array to become fully undisturbed.

Anyhow, IMO the 6 in-series LED array would probably produce more than 1.10 volts when fully undisturbed, but unfortunately I have no idea how long it’s going to take the LEDs to become undisturbed after shining a relatively bright flashlight near them. The LEDs are coated with Liquid Paper on all sides except the bottom, which was facing the flashlight. The light had two affects on the LED array –>

1. It disturbed the LEDs.

2. It caused the LED array resistance to significantly drop, which appreciably discharged the low leakage capacitor.

So the LED array needs time to become undisturbed, and it needs to charge the low leakage capacitor again. Normally I would say this would take at least three weeks, but this will be the first time that extreme care was taken in being certain the diode array is connected to ultra high resistance. This might decrease the diode recovery time.

If twice as many LEDs were placed in series, for a total of 12, it appears they could produce enough DC voltage to charge a 0.01 uF capacitor that could flash an efficient LED enough to be perceived by a person.

One final note, yesterday the entire diode testing setup was moved from the garage to inside in the lab. The reason being is that the garage temperature extremes is significant compared to inside the lab. This is an attempt to minimize diode disturbance. Maybe a sign should be placed near the testing lab, “Shhhh, diodes are present!”

Yesterdays major breakthrough explains the TED effect. Materials with high resistivity have long term resistance effect where the agitated materials resistance takes a relatively long time to reach its normal state. The diode contains exceptionally high resistive material in the depletion area, which explains why the agitated diode requires a long time to settle down.

In quantum physics it is well known that energy causes the electron to jump from the valence band to the conduction band. Once in the conduction band, the electron is mobile. Such energy can come from various sources such as heat and electrical current, which cause valence band electrons to jump to the conduction band. Once in the conduction band, it takes time for the average electron to jump back into the valence band. In materials with ultra high resistivity, the period of time can be on the order of days to weeks.

The depletion width in a diodes is thin, on the order of nano to micro meters. It is the thin depletion width that is responsible for the diodes resistance, as it is the region nearly completely void of charged carriers. As an example, the resistivity of the depletion zone in a typical Silicon schottky diode with a contact area of 1 mm by 1 mm, and a depletion width of 2 um, with 240 Gohm Rz is 1.3E+11 ohm·m, which is equivalent to glass. So the diode depletion zone has ultra high resistivity, which explains why the diodes resistivity can take weeks to stabilize after being agitated.

Higher resistivity equates to requiring more time for all of the knocked out conduction electrons to obtain thermal equilibrium. Yesterdays experiment showed that the mercury vapor filled tube that has low resistivity (compared to the glass) would take days for the resistance to appreciably settle down. It’s reasonable for materials with ultra high resistivity to take weeks.

Today was a major breakthrough in the diode research. The discovery is regarding the link between the TED effect and the cause of dielectric absorption & related effects. The TED effect is what I discovered in early 2007. It is the effect where the DC voltage produced by diodes is highly sensitive to external influence, and the slow increase in DC voltage produced by the disconnected and shielded diode. The past two days of measurements on the resistance of mechanical tilt switches when open/off is showing how the resistance of a switch is relatively low after *disturbing* the switch, but as the switch sits undisturbed the resistance *slowly* increases. For example, the resistance of a *solid* metal ball type of tilt switch took ~ one hour to increase from 250 Mohm to nearly 1 Tohm. As I type this blog, a new experiment is running in the background on a Mercury tilt switch. Yesterday the resistance was measured at ~ 0.6 Gohm. Today the mercury tilt switch measurements are more detailed in that the resistance versus time is being logged –>

Off/open resistance of mercury tilt switch:
~ 1 minute (was not exactly timed) =  0.44 Gohm
5 minutes (+/- 1 min.) = 0.66 Gohm
17 minutes (+/- 1 min.) = 1.4 Gohm
26 minutes (+/- 1 min.) = 2.8 Gohm
52 minutes (+/- 1 min.) = 5.7 Gohm
84 minutes (+/- 1 min.) = 6.6 Gohm
95 minutes (+/- 1 min.) = 9.7 Gohm
109 minutes (+/- 1 min.) = 11 Gohm
125 minutes (+/- 1 min.) = 13 Gohm
145 minutes (+/- 1 min.) = 15 Gohm
186 minutes (+/- 1 min.) = 17 Gohm
262 minutes (+/- 1 min.) = 21 Gohm
293 minutes (+/- 1 min.) = 23 Gohm
End of experiment. Resistance readings are two digit accuracy.

Notes: Between 52 to 84 minutes perhaps there was a hindrance to the rise in resistance, but between 84 and 95 minutes a sudden rise in resistance, as if a sudden change or avalanche effect, or as if there are energy levels involved. It’s difficult to say with just one this experiment alone, but such sudden changes in the diodes DC current and voltage have been observed as well, as if there are energy levels involved. Even after 262 minutes the increase in resistance is relatively linear, which suggests it could take days to reach the 99% peak resistance.

Update: To test the sensitivity of the mercury tilt switch resistance, I open the metal shield lid and placed my fingers on the mercury switch pin, closed the door, came back in 3 minutes, and read the DC current shown by the Keithley pico amp meter, and the calculated resistance from the known DC voltage source, which came to 17 Gohm. The act of touching the mercury tilt switch for a few seconds dropped the resistance from 23 Gohm to 17 Gohm.

This was enormously interesting to me, as the connection between the *slow* increase in switch off/open resistance, slow increase in capacitor insulation resistance (IR), and the slow increase in diode DC voltage while undisturbed (TED effect) quickly popped in my head. It is well known that the parallel resistance of a capacitor (referred to as insulation resistance, IR) increases over time– dielectric absorption. Capacitor manufacturing companies that conductor detailed capacitor measurements (sign of a good company) will show the capacitors IR in the datasheet. The IR is commonly measured after one minute. A low leakage capacitor will have anywhere from a few giga ohms to 500 giga ohms IR in one minute. A good EE in the EE newsgroup forums performed detailed long term capacitor measurements to discover that the IR continues to rise over time, reaching outrageously high levels of resistance in low leakage capacitors.

The slow increase in resistance over time appears to be a common property in matter. That is, the resistance slowly rises when left alone and undisturbed. The initial disturbance in capacitor measurements would be shorting the capacitor for a duration, followed by applying the DC voltage. Even this method leads to a wide range in IR measurements in the industry since there are no standards to the testing procedure. A clever EE that might have a clue what’s happening could take an undisturbed capacitor, slowly discharge it, gently apply the DC voltage, and measure IR after one minute, thus show exceptionally higher IR. IMO that’s what Wima did, as their datasheet shows an IR of 500 Gohm, while the same type of capacitors made by other companies are considerably less.

The aforementioned known dielectric absorption effect known in capacitors, and the recently discovered slow increase in off/open resistance of mechanical switches is exactly what I’ve discovered in diode measurements. Johnson noise is relative to sqrt(R), where R is the resistance. Over time, diode resistance increases, at a slow rate mind you. Since the DC voltage is related to the amount of Johnson noise, this means the DC voltage slowly rises in time after being disturbed.

The fact that the produced DC voltage by diodes rises at such a slow rate has been a great mystery to me, and difficult to explain until today, although I’ve had various theories, but this recent discovery now places the TED effect in the *realistic* category, no longer mystical.

The Mercury tilt switches are *NO* good for the diode measurements. Obviously they work, but their resistance is far to low, so they will shunt the voltage. This good easily explain why the DC voltage produced by the recent in-series LED arrays were slowly decaying. Within an hour or so I’ll make a blog post about this.

As stated before, some time ago I did quick and dirty measurements on the Mercury tilt switch resistance, which showed significant resistance, but the problem is in the Mercury that forms a certain amount of gas in the tube. This seems to vary with temperature and how many times the tube is tilted (agitated). Yesterday I did details measurements, and the mercury tilt switch was at 0.6 Gohm, that is giga, not Tera! That is far too low. It’s possible this particular switch has a default. Today I’ll take measurements on some more Mercury tilt switches.

I have some other tilt switches (part #’s unknown) that work great. Their resistance was so high that all I know is they are above 50 Gohm. Today I’ll try to get an accurate resistance measurement on them

Switches I recommend:
I would recommend tilt switches that use a *solid* metal ball, plate, or some type of solid swinging metal. If you want to use a mechanical push button type of switch, then try to find a switch where the metal contacts are as far apart as possible. I would recommend a separation distance of at least 2.5 mm (~ 0.1 inches). When time permits, I’ll buy various types of switches, find the best one, and post the part number.

Don’t get me wrong, the mercury switches are awesome tilt switches in that there’s no bounce like solid metal ball switches. They’re good to have around when ultra high resistance is unnecessary.

Anyhow, today I’ll test the other Mercury tilt switches to see if all of them have around the same 0.6 Gohm resistance. It was interesting watching just how slow the resistance of the Mercury tilt switch change in resistance over time.

Here’s the parts list for mouser.com –>

++++++++++++++++++++++++++++
—-+—————————–+——–+———+———-+————-
|       MOUSER PART NO.       |  EST.  |         |          |
LINE|      CUSTOMER PART NO.      |  SHIP  |   QTY   |   UNIT   |  EXTENDED   
NO.|         DESCRIPTION         |  DATE  | ORDERED |  PRICE   |    PRICE    
—-+—————————–+——–+———+———-+————-
1 512-MMBF4118                  07/22/09        25      0.161          4.03
ULTRA LOW LEAKAGE FET                                                    
N-Channel Switch                                                         
RoHS: Compliant

2 512-MMBD1503                  07/22/09       100      0.052          5.20
VF=0.67V @ 1MA                                                           
High Conductance                                                         
RoHS: Compliant

3 512-FDH333_Q                  07/22/09        50      0.050          2.50
VF=0.845V @ 50MA                                                         
High Conductance

4 610-CMAD6001                  07/22/09        10      0.280          2.80
VF(MAX)=0.95V @ 10MA                                                     
100V 250mA                                                               
RoHS: Compliant

5 512-MMSD4148                  07/22/09       100      0.037          3.70
VF(MAX)=1V @ 10MA                                                        
Hi Conductance Fast                                                      
RoHS: Compliant

6 771-BAS416-T/R                07/22/09       100      0.058          5.80
VF=0.8V @ 5.4MA                                                          
DIODE LOW LEAKAGE                                                        
RoHS: Compliant

7 505-FKP20.022/100/10          07/22/09         5      0.670          3.35
IR=500GOHM                                                               
.022uF 100V 10%                                                          
RoHS: Compliant

8 859-LTST-C190EKT              07/22/09       100      0.080          8.00
Red Clear                                                                
RoHS: Compliant

9 638-QTLP601CRTR               07/22/09       100      0.072          7.20
0603 RED SUPER                                                           
RoHS: Compliant

10 645-598-8010-107F             07/22/09       200      0.066         13.20
VF~=1.7V @ 250UA                                                         
Red Water Clr                                                            
RoHS: Compliant

11 720-LGQ971-KN-1               07/22/09       100      0.066          6.60
RZ ~= 1TOHM                                                              
Green, 570nm                                                             
RoHS: Compliant

12 828-OVLGY0C9B9                07/22/09        30      0.120          3.60
258 LM/W                                                                 
Yellow                                                                   
RoHS: Compliant

13 78-TLCR5800                   07/22/09        20      0.270          5.40
190 LM/W                                                                 
Red Clear Non-Diff                                                       
RoHS: Compliant

=============
Merchandise Total:         $71.38
++++++++++++++++++++++++++++

Here’s the parts list for newark.com –>

++++++++++++++++++++++++++++
*_Part Num._*     *_Qty._*     *_Availability_*     *_Line Price_*     *_Description_*
*_Mfr Part #_*     *_Mfr Name_*
12M7356     10     In Stock     3.93     Film Capacitor; Capacitor Type:Bypass/Decoupling;
Capacitance:0.1µF; Capacitance Tolerance:± 10%; Voltage Rating:250VDC; Capacitor
Dielectric Type:Polyethylene Teraphtalate; Lead Spacing:10mm; Termination
Type:Radial Leaded ;RoHS Compliant: Yes     MKS4 0.1UF ±10% 250V         
26M2247     2     In Stock     3.62     Thick Film; Power Rating:125mW; Resistance:1Gohm;
Resistance Tolerance:± 30%; Series:RH73; Operating Temperature Range:-55°C to
+125°C; Resistor Element Material:Thick Film; Voltage Rating:100VDC ;RoHS
Compliant: Yes     RH73W2A1GNTN         
34M8202     7     In Stock     11.55     Thick Film; Power Rating:125mW; Resistance:10Gohm;
Resistance Tolerance:± 30%; Series:RH73; Operating Temperature Range:-55°C to
+125°C; Resistor Element Material:Thick Film; Voltage Rating:100VDC ;RoHS
Compliant: Yes     RH73X2A10GNTN         
86K8549     10     Awaiting Delivery     2.72     Film Capacitor; Capacitance:1000pF;
Capacitance Tolerance:± 5%; Voltage Rating:100VDC; Capacitor Dielectric
Type:Polypropylene; Lead Spacing:5mm; Termination Type:Radial Leaded; Operating
Temp. Max:85°C; Operating Temp. Min:-55°C ;RoHS Compliant: Yes     FKP2 1000PF
+/-5% 100V         
26M1620     20     In Stock     4.30     Film Capacitor; Capacitance:10nF; Capacitance
Tolerance:± 10%; Voltage Rating:63VDC; Capacitor Dielectric Type:Polyethylene
Teraphtalate; Lead Spacing:5mm; Termination Type:Radial Leaded; Operating Temp.
Max:100°C ;RoHS Compliant: Yes     MKS2 0.01UF ±10% 63V         
30M9711     10     In Stock     3.10     Film Capacitor; Capacitance:0.22µF; Capacitance
Tolerance:± 10%; Voltage Rating:63VDC; Capacitor Dielectric Type:Polyethylene
Teraphtalate; Lead Spacing:5mm; Termination Type:Radial Leaded; Operating Temp.
Max:100°C ;RoHS Compliant: Yes     MKS2 0.22UF ±10% 63V         
26M1633     5     In Stock     1.86     Film Capacitor; Capacitor Type:Bypass/Decoupling;
Capacitance:0.047µF; Capacitance Tolerance:± 10%; Voltage Rating:250VDC;
Capacitor Dielectric Type:Polyethylene Teraphtalate; Lead Spacing:10mm;
Termination Type:Radial Leaded ;RoHS Compliant: Yes     MKS4 0.047UF ±10% 250V         
45J1609     100     In Stock     4.30     Zener Diode; Zener Voltage Typ, Vz:91V; Power
Dissipation, Pd:0.5W; Package/Case:2-SOD-123; No. of Pins:2; Breakdown Voltage
Max:43V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes;
Power (Ptot):5W ;RoHS Compliant: Yes     MMSZ5270BT1G     ON SEMICONDUCTOR     
27H4608     30     In Stock     4.68     Fast Recovery Power Rectifier; Repetitive Reverse
Voltage Max, Vrrm:1200V; Forward Current, If(AV):0.5A; Forward Surge Current
Max, Ifsm:20A; Reverse Recovery Time, trr:300ns; Forward Voltage Max, VF:1.8V;
Package/Case:DO-204AL ;RoHS Compliant: No     RGP02-12E/23     GENERAL SEMICONDUCTOR     
26M5670     2     In Stock     3.26     Film Capacitor; Capacitor Type:Suppression;
Capacitance:4.7µF; Capacitance Tolerance:± 10%; Series:MKS4; Voltage
Rating:63VDC; Capacitor Dielectric Type:Polyethylene Teraphtalate; Lead
Spacing:15mm; Termination Type:Radial Leaded ;RoHS Compliant: Yes     1049121110         
87K2897     5     In Stock     3.00     Film Capacitor; Capacitance:1µF; Capacitance
Tolerance:± 10%; Voltage Rating:63VDC; Capacitor Dielectric Type:Polyethylene
Teraphtalate; Lead Spacing:5mm; Termination Type:Radial Leaded; Operating Temp.
Max:100°C ;RoHS Compliant: Yes     MKS2 1UF ±10% 63V     FARNELL     
10N9506     100     In Stock     2.40     Zener Diode; Zener Voltage Typ, Vz:27V; Power
Dissipation, Pd:0.5W; Termination Type:SMD; Operating Temperature Range:-55°C to
+150°C; Package/Case:2-SOD-123; No. of Pins:2; Leaded Process Compatible:Yes
;RoHS Compliant: Yes     MMSZ4711T1G         
89K1523     100     In Stock     11.80     Schottky Rectifier; Repetitive Reverse Voltage
Max, Vrrm:400V; Package/Case:DO-214AA; Forward Current:1A; Forward Voltage:1.5V;
Leaded Process Compatible:Yes ;RoHS Compliant: Yes     SMBYT01-400     Arrow Electronics     
19M1446     5     In Stock     1.47     Film Capacitor; Capacitance:2200pF; Capacitance
Tolerance:± 5%; Voltage Rating:100VDC; Capacitor Dielectric Type:Polypropylene;
Lead Spacing:5mm; Termination Type:Radial Leaded; Operating Temp. Max:85°C;
Operating Temp. Min:-55°C ;RoHS Compliant: Yes     FKP2 2200PF ±5% 100V         
79K1906     10     In Stock     2.89     Film Capacitor; Capacitance:680pF; Capacitance
Tolerance:± 5%; Voltage Rating:100VDC; Capacitor Dielectric Type:Polypropylene;
Lead Spacing:5mm; Termination Type:Radial Leaded; Operating Temp. Max:85°C;
Operating Temp. Min:-55°C ;RoHS Compliant: Yes     FKP2 680PF ±5% 100V         
98K8248     20     In Stock     1.44     Thick Film; Power Rating:125mW; Resistance:100Mohm;
Resistance Tolerance:± 5%; Series:HRC; Operating Temperature Range:-55°C to
+125°C; Resistor Element Material:Thick Film; Voltage Rating:150VDC ;RoHS
Compliant: Yes     235052191001         
25M9475     10     In Stock     2.89     Film Capacitor; Capacitance:470pF; Capacitance
Tolerance:± 5%; Voltage Rating:100VDC; Capacitor Dielectric Type:Polypropylene;
Lead Spacing:5mm; Termination Type:Radial Leaded; Operating Temp. Max:85°C;
Operating Temp. Min:-55°C ;RoHS Compliant: Yes     FKP2 470PF ±5% 100V         
78K8300     1     In Stock     7.56     Instrumentation Amplifier IC; No. of Amplifiers:1;
Gain Bandwidth -3db:800kHz; Gain Max, V/V:1000; Amplifier Output:Single Ended;
Supply Voltage Min:4.5V; Supply Voltage Max:36V; Package/Case:16-DIP; No. of
Pins:16 ;RoHS Compliant: Yes     INA116PA     TEXAS INSTRUMENT CONNECTORS     
10N9516     100     In Stock     3.50     Zener Diode; Zener Voltage Typ, Vz:82V; Power
Dissipation, Pd:0.5W; Termination Type:SMD; Operating Temperature Range:-55°C to
+150°C; Package/Case:2-SOD-123; No. of Pins:2; Leaded Process Compatible:Yes
;RoHS Compliant: Yes     MMSZ5268BT1G         
10M9627     100     Partial Stock (83)     5.80     Fast Recovery Power Rectifier;
Repetitive Reverse Voltage Max, Vrrm:800V; Forward Current, If(AV):1A; Forward
Surge Current Max, Ifsm:30A; Reverse Recovery Time, trr:75ns; Forward Voltage
Max, VF:1.7V; Package/Case:DO-41 ;RoHS Compliant: Yes     UF108-RH     Multicomp
Semiconductors

Shipping : $0.00
Direct Ship Charge : $0.00
Tax : $0.00
Total (excl. Tax & Shipping) : $86.07

Shipping Method : Standard Delivery – 2-3 Day Delivery at Ground Rate (Order by
9:30 PM EST)
Payment Method : Credit Card
++++++++++++++++++++++++++++